Presentation Information
[9p-PA1-45]Annealing Temperature Dependence of Ga-Sn-O Based MSM UV Sensors
〇(M1)Seiya Nakata1, Matuda Tokiyoshi1 (1.Kindai Univ)
Keywords:
oxide semiconductor,UV sensor,GTO
Ga-Sn-O (GTO) is an oxide semiconductor expected to be applicable to electronic devices. In this study, high-temperature annealing was applied to GTO thin films deposited by RF magnetron sputtering, and MSM-type ultraviolet sensors were fabricated. The effects of annealing temperature on the I–V characteristics and photo-to-dark current ratio (PDCR) were evaluated. In addition, the factors responsible for the changes in device characteristics were investigated through correlation with XPS analysis results. As a result, the sensor characteristics were found to vary significantly with annealing temperature.