Presentation Information
[9p-PA1-46]Etch pit evaluation of β-Ga2O3 (011) crystal by using wet etching method
〇Koji Sato1, Daiki Katsube1, Yongzhao Yao1,2, Maki Shimizu1, Hitrotaka Yamaguchi1, Yukari Ishikawa1 (1.JFCC, 2.Mie Univ.)
Keywords:
Power device,Ga2O3,Etch pit
Wet etching of β-Ga2O3(011) single crystals was performed using H2SO4, KOH+NaOH, and H3PO4 to assess its applicability as a defect visualization technique. No significant surface modification was observed after etching in H2SO4, whereas hillocks were formed in KOH+NaOH and etch pits were formed in H3PO4. By comparing these surface features with XRT and TEM observations, we investigated their correlation with dislocations and evaluated the feasibility of selective etching on the (011) plane.