[9p-PA1-1~52] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-PA1-47] Phase Stability of Ambipolar Wide-Gap Semiconductor γ-GeO₂ Toward Single Crystal Growth by TSFZ Technique

〇Asahi Ishii¹, Kazuhiro Yamaki¹, Akinobu Irie¹ (1.Utsunomiya Univ.)

Keywords:

wide-gap semiconductor,rutile-type germanium dioxide,single crystal