[9p-PA1-1~52] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-PA1-51] Growth of β-Ga₂O₃ Single Crystals by the FZ Technique Using a Light-Absorbing Additive

〇Riku Hirato¹, Yamaki Kazuhiro¹, Irie Akinobu¹ (1.Utsunomiya Univ.)

Keywords:

power semiconductor,floating zone method,crystal growth