[9p-PB3-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[9p-PB3-1] Circularly polarized photoluminescence properties of dilute nitride InGaAsN quantum dots grown via a nitrogen leakage method

〇Ayano Morita¹, Hiroto Kise¹, Eita Tagawa¹, Junichi Takayama¹, Akihiro Murayama¹, Satoshi Hiura¹ (1.Hokkaido Univ.)

Keywords:

quantum dot,dilute nitride semiconductor,time-resolved photoluminescence