[9p-PB3-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[9p-PB3-3] Photoluminescence properties of InGaAs quantum dots with a remote Si-doped layer

〇Futa Sakai¹, Ayano Morita¹, Yuma Suzuki¹, Hiroto Kise¹, Junichi Takayama¹, Akihiro Murayama¹, Satoshi Hiura¹ (1.Hokkaido Univ.)

Keywords:

quantum dots,photoluminescence,time-resolved photoluminescence