Presentation Information
[15a-70A_101-3]Thin film atomic layer deposition and selective processes
〇Rong Chen1 (1.Huazhong University of Science and Technology)
Keywords:
atomic layer deposition,thin film
Over the past decades, the semiconductor industry has consistently advanced toward miniaturization and integration. Atomic scale processes, such as atomic layer deposition (ALD) and atomic layer etching (ALE), have emerged as promising methods offering atomic to close-atomic-scale precision for nanostructure fabrication. Furthermore, the conventional top-down fabrication methods such as the "deposition-lithography-etching" cycle, nevertheless, face significant challenges in overlay errors for patterned nanostructures and process complexity. This talk introduces the selective ALD, a method enables precise atomic deposition at desired locations on patterned substrates. By integrating selective ALD into patterned substrates, angstrom-level edge alignment can be achieved, addressing critical misalignment issues. Various template-assisted and inherent selective deposition techniques have been employed to align complex 3D structures, with surface reaction kinetics playing a pivotal role in tuning selectivity. Additionally, nanoscale thin films with tailored electrical properties, such as high-k and low-k dielectric layers, high-mobility conductive oxides, are essential for optoelectronic applications. These approaches hold the potential to overcome the limitations of conventional methods, offering scalable solutions for achieving advanced technology nodes, unlocking new possibilities in precision manufacturing and enabling breakthroughs across a wide range of technological applications.