Session Details

[15a-70A_101-1~7]Atomic Layer Process (ALP) analysis and application technologies (3)

Sun. Mar 15, 2026 9:00 AM - 12:20 PM JST
Sun. Mar 15, 2026 12:00 AM - 3:20 AM UTC
70A_101 (70th Anniversary Auditorium)
Chair : Satoshi Hamaguchi(Osaka Univ.), Takeshi Momose(Kumamoto Univ.)
This symposium provides an overview of atomic layer processes (ALP), including atomic layer deposition (ALD) and atomic layer etching (ALE), whose importance is rapidly increasing in advanced semiconductor device manufacturing, covering both characterization and applications. The morning program is an English session featuring six invited talks by leading researchers from abroad. Topics span high-temperature selective ALD, new paradigms for 3D device fabrication, process analysis using ultra-high-aspect-ratio structures, in situ diagnostics, and plasma-based ALE, offering an integrated discussion of “depositing, etching, and measuring.”

Sponsors
気相成長   ALD Japan  samuco     日本スウェージロックFST   LamResearch 
 Matlantis

[15a-70A_101-1]Opening

〇Yukihiro Shimogaki1 (1.The Univ. of Tokyo)
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[15a-70A_101-2]Establishing High-Temperature Area Selective ALD Process through Surface Inhibition

〇Haonan Liu1, Ken Okoshi1, Hiroki Murakami1, Yamato Tonegawa1 (1.TEL TTS)
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[15a-70A_101-3]Thin film atomic layer deposition and selective processes

〇Rong Chen1 (1.Huazhong University of Science and Technology)
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[15a-70A_101-4]New Paradigms in Atomic Layer Deposition for 3D Semiconductor Device Fabrication

〇Han-Bo-Ram Lee1,2 (1.Incheon National University, 2.ACS Publications)
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[15a-70A_101-5]Ultra-High Aspect Ratio Test Structures in ALP Process Analytics

〇Mikko Utriainen1 (1.Chipmetrics Ltd)
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[15a-70A_101-6]Development of Atomic Layer Deposition and Atomic Layer Etching Processes for Semiconductor Device Fabrication using In Situ Diagnostics

〇Sumit Agarwal1 (1.Colorado Sch Mines)
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[15a-70A_101-7]Plasma-Based Atomic Layer Etching for Atomic-Scale Semiconductor Device Fabrication

〇Heeyeop CHAE1 (1.Sungkyunkwan Univ. (SKKU))
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