[15a-M_124-1~13] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)English Presentation

[15a-M_124-5] Reinvestigation on Subthreshold Swing of Gate-All-Around Nanosheet FETs in
Quantum Limit for Voltage Scaling

〇Yaoping Xiao¹, Yuxuan Wang¹, Xiaoran Mei¹, Tomoko Mizutani¹, Takuya Saraya¹, Toshiro Hiramoto¹, Masaharu Kobayashi¹ (1.IIS, Univ. of Tokyo)

Keywords:

Subthreshold Swing,Quantum confinement

Subthreshold Swing (SS) is one of the most important device characteristics for power reduction by voltage scaling in advanced CMOS technology. However, as device dimensions continue to shrink, maintaining a small SS has become increasing challenging [1][2]. In particular, for gate-all-around (GAA) nanosheet (NS) field-effect transistors (FETs), the Silicon (Si) thickness is scaled to the ultrathin regime. In this range, the quantum confinement (QC) effect becomes non-negligible and must be carefully considered for electrostatics, particularly SS. In this work, GAA ultrathin-body FETsare fabricated, and the dependence of SS on Si body thickness down to 1 nm is systematically investigated to clarify the impact of QC.