Presentation Information
[15a-PA4-17]Comparative Study of Structural Radiation Effects on Silicon Semiconductor Detectors
〇Nana Kobayashi1, Katsuki Watabe1, Naoki Saito2, Yasuki Okuno3, Shinnosuke Idogawa1 (1.NIT, Kushiro College, 2.Hokkaido University, 3.RIKEN)
Keywords:
Silicon Semiconductor Detector,pn junction,Spin on glass
The structure of a pn junction strongly affects the radiation response of semiconductor detectors. In this study, silicon semiconductor detectors with different pn junction geometries were fabricated to investigate structural radiation effects. Detectors with grooved junctions were designed by varying the groove spacing to increase the effective pn junction surface area. The devices were fabricated using the Spin-on-Glass (SOG) diffusion method combined with anisotropic etching. Radiation response was evaluated by applying reverse bias voltage and measuring the output signals generated by incident radiation. The results indicate that changes in groove spacing and reverse bias voltage modify the depletion layer shape, leading to differences in charge generation. This study demonstrates that structural radiation effects on semiconductor devices can be evaluated safely and at low cost.