Presentation Information
[15a-PA4-3]Characteristic Evaluation of SiC JFET Gain Stages Under Gamma-Ray Irradiation
Ryuya Hirose1,2, 〇Daisuke Watanabe1,2, Mikihiro Yuzuriha1,2, Masayuki Yamamoto1,2, Hitoshi Umezawa1, Takahide Sato2, Akinori Takeyama3, Takahiro Makino3, Takeshi Ohshima3, Shin-Ichiro Kuroki4, Yasunori Tanaka1 (1.AIST, 2.Univ. of Yamanashi, 3.QST, 4.Hiroshima Univ.)
Keywords:
4H-SiC,gamma ray,operational amplifiers
In this study, gamma rays were irradiated onto a gain stage using an operational SiC JFET, and the post-irradiation characteristics were evaluated. The results showed no changes in the frequency characteristics of voltage gain and phase at an accumulated dose of 1 MGy. Furthermore, a SiC JFET operational amplifier was fabricated for future irradiation tests, and its characteristics were evaluated. The measurement results confirmed that sufficient voltage gain was obtained for use as an operational amplifier.