Presentation Information
[15a-PA4-4]Development and Evaluation of Radiation-Hardened SiC Photodiodes
Mikihiro Yuzuriha1,2, 〇Takuya Matsunaga1,2, Sho Suzuki3, Hitoshi Umezawa1, Masayuki Yamamoto1,2, Shin-Ichiro Kuroki3, Yasunori Tanaka1 (1.AIST, 2.Yamanashi Univ., 3.Hiroshima Univ.)
Keywords:
4H-SiC,radiation,photodiode
In this study, we aimed to develop an active pixel sensor (APS) integrated with radiation-hardened 4H-SiC JFETs and fabricated a prototype UV photodiode on an n-type epitaxial layer. We then measured the I–V characteristics under UV illumination and evaluated the wavelength dependence of the external quantum efficiency (EQE). Furthermore, TCAD simulations were used to analyze the carrier recombination regions that contribute to the reduction in EQE.