Presentation Information
[15a-PA5-13]Changes of AC Surface Photovoltage for Metal Induced Crystallization of Ge thin films
〇Takafumi Toyoda1, Masanori Ikeda1 (1.Nihon Univ.)
Keywords:
Ge thin film,Altanative Current Surface Photovoltage
Changes of alternating current surface photovoltage (AC SPV) for the metal induced crystallization process of Ge thin film were investigated. Ge/Al/SiO2 structure samples were prepared by vapor deposition and sputtering. Structural changes in the Ge/Al/SiO2 and crystallization of the Ge thin films by N2 annealing above 375℃ were confirmed. The AC SPV from the sample surface increased with the crystallization of Ge, and the SPV signals inverted at annealing temperature of 500℃. These results suggest a relationship between the crystallization of the Ge thin films and AC SPV.