Presentation Information
[15a-PB2-5]Mechanism of fast neutron radiation effects on silicon carbide power MOSFETs and structural reinforcement design
〇(M2)Teng Gong2,1, Chenghao Yu2, Wensheng Zhao2, Masayuki Yamamoto1, Haomin Guo2, Xingda Chen1,2 (1.University of Yamanashi, 2.Hangzhou Dianzi University)
Keywords:
SiC MOSFET,Neutron radiation,Electrical Property Degradation
Silicon carbide (SiC) has important application prospects in fields such as new energy vehicles,and nuclear energy. However, fast neutrons, due to their strong penetration and difficulty in shielding, have become one of the main threats in space and nuclear radiation environments.
At present, there is insufficient research on the neutron radiation effects of SiC devices both domestically and internationally, especially the lack of multi physics coupling mechanisms and refined simulation models for fast neutron damage. This study aims to reveal the failure mechanism of trench gate structures under high temperature and high pressure, and establish a high-precision TCAD Monte Carlo joint simulation model.
The research content mainly includes fast neutron irradiation experiments and analysis of electrical property degradation, the influence of temperature and bias voltage on damage behavior, theoretical and simulation studies on single particle burning and gate penetration mechanisms, and the proposal and verification of new radiation resistant reinforcement structures based on this. The key issues to be addressed include cross scale damage mapping, decoupling of multi effect coupling mechanisms, and collaborative design between radiation resistance and low loss.
At present, there is insufficient research on the neutron radiation effects of SiC devices both domestically and internationally, especially the lack of multi physics coupling mechanisms and refined simulation models for fast neutron damage. This study aims to reveal the failure mechanism of trench gate structures under high temperature and high pressure, and establish a high-precision TCAD Monte Carlo joint simulation model.
The research content mainly includes fast neutron irradiation experiments and analysis of electrical property degradation, the influence of temperature and bias voltage on damage behavior, theoretical and simulation studies on single particle burning and gate penetration mechanisms, and the proposal and verification of new radiation resistant reinforcement structures based on this. The key issues to be addressed include cross scale damage mapping, decoupling of multi effect coupling mechanisms, and collaborative design between radiation resistance and low loss.