Session Details
[15a-PB2-1~16]13.7 Compound and power devices, process technology and characterization
Sun. Mar 15, 2026 9:30 AM - 11:00 AM JST
Sun. Mar 15, 2026 12:30 AM - 2:00 AM UTC
Sun. Mar 15, 2026 12:30 AM - 2:00 AM UTC
PB2 (Martial Arts Hall (B1F))
[15a-PB2-1]Optimization of Ion Implantation for Suppressing Stacking Fault Expansion in 4H-SiC
〇Tong Li1, Hitoshi Sakane2, Shunta Harada3, Masashi Kato1 (1.NITech., 2.SHI-ATEX, 3.Nagoya Univ.)
[15a-PB2-2]Atomic layer doping process for SiC semiconductor interface control
〇Tetsuya Ueno1,2, Masao Sakuraba1,2, Sigeo Sato1,2, Seima Sato1,2 (1.Tohoku Univ., 2.RIEC)
[15a-PB2-3]Theoretical analysis of band alignments at 4H-SiC/SiO2 interface: Effects of NO annealing and interface defects
〇Naoto Ise1, Toru Akiyama1, Tetsuo Hatakeyama2, Kenji Shiraishi3, Takashi Nakayama4 (1.Mie Univ., 2.Toyama Pref. Univ., 3.Tohoku Univ., 4.Chiba Univ.)
[15a-PB2-4]NIT-Induced Dynamic Geometric Component in p-Channel 4H-SiC MOSFETs Revealed by Multi-Frequency Charge Pumping
Yuta Taguchi1, 〇Dai Okamoto1 (1.Toyama Pref. Univ.)
[15a-PB2-5]Mechanism of fast neutron radiation effects on silicon carbide power MOSFETs and structural reinforcement design
〇(M2)Teng Gong2,1, Chenghao Yu2, Wensheng Zhao2, Masayuki Yamamoto1, Haomin Guo2, Xingda Chen1,2 (1.University of Yamanashi, 2.Hangzhou Dianzi University)
[15a-PB2-6]Evaluation of Interface State Density Energy Distribution in Diamond MOSFET usage of 2-Dimensional Density of States Model
〇Kai Sato1, Tsubasa Matsumoto1, Kazuki Kobayashi1, Kimiyoshi Ichikawa1, Kan Hayashi1, Masahiko Ogura2, Toshiharu Makino2, Soramitsu Kato2, Daisuke Takeuchi2, Masatsugu Nagai2, Takao Inokuma1, Satoshi Yamasaki1, Norio Tokuda1 (1.Kanazawa Univ., 2.AIST)
[15a-PB2-7]Fabrication of inversion-type GaN MOSFET by applying simultaneous low-temperature annealing to MOS interface and ohmic contacts
〇Hiroto Akabane1, Hinata Karasawa1, Masanobu Takahashi1, Masamichi Akazawa1 (1.RCIQE, Hokkaido Univ.)
[15a-PB2-8]Influence of Post-deposition Annealing Ambient on SiO2/n-Si and SiO2/n-GaN MOS Capacitors Formed by Atomic-Species-Enhanced Chemical Vapor Deposition
〇Ryuta Yoshikawa1, Hiroshi Okada1, Masakazu Hurukawa2, Akihiro Wakahara1, Hideaki Yamamoto1, Mituki Koda1 (1.Toyohashi University of Technology, 2.Arieace Reserch Ltd.)
[15a-PB2-9]Substrate bias dependence of transfer characteristics in GaN MOSFETs
〇Kenji Ito1, Tetsuo Narita2, Hiroko Iguchi2, Shiro Iwasaki2, Daigo Kikuta2 (1.IMaSS, Nagoya Univ., 2.TOYOTA CENTRAL R&D Lab., INC.)
[15a-PB2-10]Characterization of plasma-induced defects in GaN by the reverse bias annealing (4)
〇Manato Fujitsuna1, Seiji Nakamura1 (1.Tokyo Metropolitan Univ.)
[15a-PB2-11]Simulation Study on Damage Mechanism of GaN HEMT under High Power Microwave Stress
〇(M2)Chen Xingda1,2, Yu Chenghao2, Masayuki Yamamoto1, Guo Haomin2, Gong Teng1,2 (1.University of Yamanashi, 2.Hangzhou Dianzi University)
[15a-PB2-12]Influence of Internal Gate Inductance in Cascode GaN-HEMT
〇Toshihide Ide1, Ryosaku Kaji1, Katsumi Furuya1 (1.AIST)
[15a-PB2-13]Photon Enhanced Thermionic Emission Characteristics of Cs-Free InGaN Emitters
〇(M1)Kaisei Suzuki1, Shigeya Kimura2, Hisao Miyazaki2, Akihisa Ogino1 (1.Shizuoka Univ., 2.Corporate Laboratory, Toshiba Corp.)
[15a-PB2-14]Effect of Channel Layer Thickness on Device Performance for Double-doped InAsSb HEMT by Quantum-Corrected Monte Carlo Simulation
Naoya Kodama1, Chinatsu Hirohara1, Tomoya Umekawa1, 〇Akira Endoh1, Hiroki Fujishiro1 (1.Tokyo Univ. of Science)
[15a-PB2-15]Quantitative Evaluation of the Impact of Silicon Wafer Defect Levels on 3.3 kV Si-IGBT Characteristics
〇Bozhou Cai1, Keiji Tagami1, Wataru Saito2, Shin-ichi Nishizawa2 (1.Kyushu Univ. IGSES, 2.Kyushu Univ. RIAM)
[15a-PB2-16]Role of capping layer in the reductive annealing process of SnO2 thin films
〇(B)Shion Kawasaki1, Yoshikazu Xin1, Shinya Aikawa1 (1.kogakuin Univ.)