[15a-PB3-1~1] 15.6 Group IV Compound Semiconductors (SiC)

[15a-PB3-1] Ray-tracing simulation of X-ray topography of dislocations with depth dependence

〇Takeru Nishizawa¹, Yao Yongzhao¹, Ohnishi Kazuki¹ (1.Mie Univ.)

Keywords:

semiconductor,ray-tracing

We developed a ray-tracing simulator for X-ray topography to analyze dislocation contrast in 4H-SiC, incorporating depth-dependent strain integration and X-ray absorption. Unlike conventional 2D models, this method accounts for dislocation inclination due to off-cut angles. The simulation successfully reproduced the characteristic "tail" images of threading edge dislocations, demonstrating that these features arise from cumulative strain effects along the depth direction.