[15a-S2_202-1~10] CS.1 Code-sharing Session of 2.3 & 7.4

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[15a-S2_202-4] Surface resistivity control and electron transport mechanisms of sapphire substrates by Ni-ion implantation

〇(M1)Tsugumi Kaneko¹, Akio Ogura², Souichi Katagiri² (1.Tsukuba Univ. MPAP, 2.Tsukuba Univ. IPAS)

Keywords:

ion implamtation

In charged particle accelerators, solid insulators supporting accelerating electrodes in vacuum are used, and tracking discharge poses a problem. We focused on removing positive charge from the insulator surface to suppress discharge and investigated whether Ni ions could be implanted into a sapphire substrate to impart slight conductivity to its surface. This presentation reports that post-implantation etching accumulates Ni near the surface, enabling surface resistance control, and details the results of our investigation into the underlying electronic conduction mechanism.