[15a-W2_401-1~9] 15.4 III-V-group nitride crystals

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[15a-W2_401-2] Fabrication and evaluation of a BAlGaN neutron detector designed for operation in harsh environments

〇Ryusuke Suzuki¹, Ryohei Kudo¹, Toru Oikawa¹, Hinata Nakanishi¹, Eito Kokubo², Yoshinori Sakurai³, Hiroshi Yashima³, Takahiro Makino⁴, Takeshi Ohshima⁴, Genichiro Wakabayashi⁵, Yoshio Honda⁶, Hiroshi Amano⁶, Yoku Inoue¹, Toru Aoki⁷, Takayuki Nakano^1,7 (1.Shizuoka Univ., 2.Nagoya Univ., 3.KURNS. Kyoto Univ., 4.QST, 5.Kindai Univ., 6.IMaSS Nagoya Univ., 7.R.I.E. Shizuoka Univ.)

Keywords:

BAlGaN,AlGaN,semiconductor neutron detector