Session Details

[15a-W2_401-1~9]15.4 III-V-group nitride crystals

Sun. Mar 15, 2026 9:00 AM - 11:30 AM JST
Sun. Mar 15, 2026 12:00 AM - 2:30 AM UTC
W2_401 (West Bldg. 2)

[15a-W2_401-1]Device Structural Study of a Vertical BGaN Neutron Detector for Flip-Chip processing.

〇Sotaro Takenaka1, Ryohei Kudo1, Kosuke Ando1, Yura Maeda1, Eito Kokubo2, Katsuyuki Takagi3, Genichiro Wakabayashi4, Tatsuro Oda5, Masahiro Hino6, Yoshio Honda7, Hiroshi Amano7, Yoku Inoue1, Toru Aoki3, Takayuki Nakano1,3 (1.Shizuoka Univ., 2.Nagoya Univ., 3.R.I.E. Shizuoka Univ., 4.Kindai Univ., 5.ISSP. Univ. of Tokyo, 6.KURNS Kyoto Univ., 7.IMaSS. Nagoya Univ.)

[15a-W2_401-2]Fabrication and evaluation of a BAlGaN neutron detector designed for operation in harsh environments

〇Ryusuke Suzuki1, Ryohei Kudo1, Toru Oikawa1, Hinata Nakanishi1, Eito Kokubo2, Yoshinori Sakurai3, Hiroshi Yashima3, Takahiro Makino4, Takeshi Ohshima4, Genichiro Wakabayashi5, Yoshio Honda6, Hiroshi Amano6, Yoku Inoue1, Toru Aoki7, Takayuki Nakano1,7 (1.Shizuoka Univ., 2.Nagoya Univ., 3.KURNS. Kyoto Univ., 4.QST, 5.Kindai Univ., 6.IMaSS Nagoya Univ., 7.R.I.E. Shizuoka Univ.)

[15a-W2_401-3]RF-MBE growth of InAlN thermoelectric thin films over whole In content range

〇Yuma Sakai1, Tsutomu Araki2, Momoko Deura1,3 (1.Waseda Univ., 2.Ritsumeikan Univ., 3.R-GIRO)

[15a-W2_401-4]Fabrication of thermoelectric devices using InGaN thin films

〇Junnosuke Nobe1, Takuya Hoshii2, Mai Awata1, Takuya Miura1, Tsutomu Araki3, Takanobu Watanabe1, Momoko Deura1 (1.Waseda Univ., 2.Science Tokyo, 3.Ritsumeikan Univ.)

[15a-W2_401-5]Investigation of Fabrication Process for Electric-Field-Induced GaN Optical Waveguide Mach-Zehnder Interferometers with pin Structure

〇Shogo Katsuki1, Issei Honda1, Ryuki Sugano2, Naoki Kubo2, Masahiro Uemukai1, Tomoyuki Tanikawa1, Ryuji Katayama1 (1.The Univ. of Osaka, 2.Nichia Corporation)

[15a-W2_401-6]Optimization of growth condition for GaN-based nanowires and multi-quantum shell structure using SiN mask

〇Takuya Takahashi1, Hiroki Teshima1, Nakagawa Aoi1, Kouki Yamada1, Haruki Hotta1, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1, Koichi Naniwae2, Kazumasa Niwa2, Kentaro Nonaka3, Yoshitaka Kuraoka3, Takashi Yoshino3, Junya Iihama4, Yoshiro Kusunose4, Masami Meahita4 (1.Meijo Univ., 2.E&E Evolution Co., LTD., 3.NGK INSULATORS, LTD., 4.Tosoh Corporation)

[15a-W2_401-7]Analysis of Current Leakage Paths in n-GaN Buried Multi-Quantum Shell Lasers

〇Koki Yamada1, Hiroki Teshima1, Takuya Takahashi1, Aoi Nakagawa1, Haruki Hotta1, Koichi Naniwae2, Kazumasa Niwa2, Kentaro Nonaka3, Yoshitaka Kuraoka3, Takashi Yoshino3, Jyunya Iihama4, Yoshiro Kusunose4, Masami Masuda4, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1 (1.Meijo Univ., 2.E&E evolution CO.LTD, 3.NGK INSULATORS, 4.Tosoh Corporation)

[15a-W2_401-8]Development of Stacked GaN-μLED Probes for Three-Dimensional Optogenetic Stimulation

〇Takemi Hanai1, Mitsuhiro Yamada3, Atsushi Nishikawa2, Alexander Loesing2, HIroto Sekiguchi1,3 (1.Meijo Univ., 2.ALLOS, 3.Toyohashi Tech.)

[15a-W2_401-9]Development of Flexible LED/ECoG Integrated Device Fabricated

〇Ruri Kurogi1, Kazuto Matsui2, Atsushi Nishikawa3, Alexander Loesing3, Takuya Hikima4, Noriaki Ohkawa4, Hiroto Sekiguchi1 (1.Meijo Univ., 2.Toyohashi Tech, 3.ALLOS, 4.Dokkyo Med. Univ.)