[15a-WL2_301-1~9] 3.7 Optical measurement, instrumentation, and sensor

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15a-WL2_301-7] Observation of Three-Dimensional Internal Defects in Wide-Bandgap Semiconductors Using Two-Photon Excitation a Blue Femtosecond Laser

〇(M1)Harutaka Suzuki¹, Yuki Azuma¹, Masaharu Nakano^1,2, Wataru Inami^1,3, Yoshimasa Kawata^1,3 (1.Shizuoka Univ., 2.IRI of Shizuoka Pref., 3.Research Institute of Electronics, Shizuoka Univ.)

Keywords:

wide-bandgap semiconductor,two-photon excited photoluminescence,blue femtosecond laser

To evaluate defect structures in wide-bandgap semiconductors such as AlN in three dimensions, we employed two-photon excited photoluminescence (PL) using a blue femtosecond laser. This technique achieves high spatial resolution while suppressing linear absorption, enabling reduced material damage. As a demonstration, we performed internal observation on an HVPE-grown GaN crystal, clearly visualizing a through-dislocation extending along the crystal's c-axis and revealing its three-dimensional distribution.