Presentation Information
[15p-PA2-12]Simulation of Photocurrent Characteristics in InAs/GaAs(111)A Heterointerface Structures Using the Finite Element Method
〇Takuya Kawazu1, Nobuyuki Ishida1, Takaaki Mano1 (1.NIMS)
Keywords:
Interface states,InAs/GaAs(111)A heterostructure,Photocurrent characteristics
To clarify the photoresponse mechanism of an infrared detector based on an n-InAs/i-GaAs(111)A heterostructure, we performed finite-element simulations using a drift-diffusion model. The experimentally observed photocurrent characteristics could be reproduced only when interface states were included, which trap charges and induce band bending. Furthermore, we found that carrier recombination at the interface states and the carrier mobility in the i-GaAs layer play crucial roles in determining the photoresponse.