Presentation Information
[15p-PA2-13]Characterization of Wavelength-Shifting and Light-Propagation Layered Structures with Semiconductor Nanoparticles Applied for Ultra-Violet Photodetectors
〇Hyugo Tanizaki1, Yuki Idutsu1, D.G. Kim1, Naoteru Shigekawa1 (1.Osaka Metropolitan Univ.)
Keywords:
semiconductor nanoparticles,Ultra-Violet Photodetectors
Visible-blind ultraviolet (UV) photodetectors, which are attracting attention for flame detection and medical applications, face limitations in conventional photomultiplier tubes due to their large size and the need for vacuum operation, while alternative materials still suffer from cost and process challenges. In this study, a UV detection structure based on wavelength conversion was investigated by forming a ZnSe/ZnS:Mn/ZnS nanoparticle-dispersed sol–gel glass layer on a Si cell to convert UV light into the visible region. By introducing a sapphire light-propagation layer, reflection and scattering losses were reduced, resulting in an enhanced external quantum efficiency in the UV region.