Presentation Information
[15p-PA2-2]Optical Characteristics of Strained Quantum Well Structure Grown on InP/Si Substrates
〇Mizuki Holt1, Kazuhiko Shimomura1 (1.Sophia Univ.)
Keywords:
semiconductor,laser,Silicon
We are developing laser devices by directly bonding thin InP films onto silicon substrates and fabricating them using the MOVPE method. In this study, the optical properties of quantum well structures with varying Ga composition were evaluated by photoluminescence (PL) measurements, focusing on the effects of strain and voids generated during the bonding of the InP thin films to the silicon substrates.