Presentation Information

[15p-W2_402-2]Contribution of Sn Concentration to the Detection Wavelength Characteristics of Ge1-xSnx/Ge Infrared Detectors

〇Tomo Tanaka1, Hiroyuki Ishii2, Rahmat Hadi Saputro2, Shigehisa Shibayama3, Masashi Kurosawa3, Osamu Nakatsuka3, Tatsuro Maeda2 (1.NEC, 2.AIST, 3.Nagoya Univ.)

Keywords:

GeSn,Infrared phododetector,PN jucntion