The 73rd JSAP Spring Meeting 2026
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Session Details

Oral presentation15 Crystal Engineering : 15.5 Group IV crystals and alloys

[15p-W2_402-1~12]15.5 Group IV crystals and alloys

Sun. Mar 15, 2026 1:30 PM - 4:45 PM JST
Sun. Mar 15, 2026 4:30 AM - 7:45 AM UTC
W2_402 (West Bldg. 2)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[15p-W2_402-1]Richardson constant for p-type Ge considering potential fluctuations

〇Tatsuro Maeda1, Hiroyuki Ishii1, Chia-Tsong Chen1, Takashi Koida1, Kouya Kudou1, Wen Hsin Chang1 (1.AIST)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[15p-W2_402-2]Contribution of Sn Concentration to the Detection Wavelength Characteristics of Ge1-xSnx/Ge Infrared Detectors

〇Tomo Tanaka1, Hiroyuki Ishii2, Rahmat Hadi Saputro2, Shigehisa Shibayama3, Masashi Kurosawa3, Osamu Nakatsuka3, Tatsuro Maeda2 (1.NEC, 2.AIST, 3.Nagoya Univ.)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)English Presentation

[15p-W2_402-3]Ge0.8Sn0.2/n-Ge Heterostructure Grown by Sputtering for Mid-Wave Infrared Photodetectors

〇Rahmat Hadi Saputro1, Tomo Tanaka2, Hiroyuki Ishii1, Kousaku Goto3, Shigehisa Shibayama3, Masashi Kurosawa3, Osamu Nakatsuka3, Tatsuro Maeda1 (1.AIST, 2.NEC Corp., 3.Nagoya Univ.)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-W2_402-4]High-quality GeSn thin films synthesis on universal substrates for near-infrared device applications

〇Shintaro Maeda1,2, Takamitsu Ishiyama1,2, Takashi Suemasu1, Toko Kaoru1 (1.Univ. of Tsukuba, 2.JSPS Research Fellow)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[15p-W2_402-5]Epitaxial Growth of GeSi Films on Solid-Phase-Crystallized Ge and Their Spectral Response

〇Akira Ogawa1, Shintaro Maeda1,2, Takashi Suemasu1, Kaoru Toko1 (1.Tsukuba Univ., 2.JSPS Research Fellow)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[15p-W2_402-6]Thermal Diffusion and Optical Emission Analysis of Mesh-Structured Ge Microbridge

〇Ryosuke Usui1, Ayaka Odashima1,2, Riku Ishikawa1, Masahiro Nomura2, Kentarou Sawano1 (1.Tokyo City Univ., 2.IIS Univ. of Tokyo)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[15p-W2_402-7]Ge concentration dependence of critical thickness of SiGe layer in CVD-SiGe/Si(110) structure

〇Koji Usuda1, Kiu Inami2,3, Naoto Kumagai3,4, Toshifumi Irisawa3,4, Atsushi Ogura1,2 (1.MREL, Meiji Univ., 2.Meiji Univ., 3.SFRC, AIST, 4.LSTC)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-W2_402-8]Surface Roughness Analysis of SiGe Epitaxy on Miscut Si(110) Substrates: Dependence on Miscut Direction and Angle

〇Kiu Inami1,2, Koji Usuda3, Naoto Kumagai1,4, Toshifumi Irisawa1,4, Atsushi Ogura2,3 (1.SFRC, AIST, 2.Meiji Univ., 3.MREL, Meiji Univ., 4.LSTC)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-W2_402-9]Strain Effects Induced by Surface Hatch in SiGe Epitaxial Thin Films on (110)Si Substrate

〇Yuta Ito1,2, Kiu Inami1,3, Koji Usuda4, Naoto Kumagai3,5, Toshifumi Irisawa3,5, Atsushi Ogura1,4 (1.Meiji Univ., 2.JSPS Research Fellow, 3.SFRC, AIST, 4.MREL, 5.LSTC)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[15p-W2_402-10]Temperature Dependence of Surface Morphology and Planarization Mechanism in SiGe Growth on Si(110)

〇(M2)Yuki Yoneyama1, Noritaka Usami1,2,3 (1.Grad Eng. Nagoya Univ., 2.InFuS Nagoya Univ., 3.IMaSS Nagoya Univ.)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[15p-W2_402-11]Strain Distribution of Local SiGe Virtual Substrate for Self-Ordered Nanodot Fabrication

〇(D)Jongeun Baek1,2, Wei-Chen Wen2, Jon Schlipf2, Andreas Mai2, Katsunori Makihara1,2, Yuji Yamamoto1,2 (1.Nagoya Univ., 2.IHP)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[15p-W2_402-12]Orientation Control of Multilayer Graphene and Its Application to Secondary Batteries

〇Kazushi Yabuki1, Koki Nozawa1, Takashi Suemasu1, Kaoru Toko1 (1.Univ. of Tsukuba)
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