[15p-W8E_307-1~16] 15.6 Group IV Compound Semiconductors (SiC)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[15p-W8E_307-9] Correlation of Carrier Recombination with Structural Defects in 4H-SiC Epitaxial Wafers

〇(M2)LINGLUN YEN¹, PoLin Sung¹, Anton Visikovskiy², Satoru Tanaka², LuSheng Hong¹ (1.National Taiwan University of Science and Technology, 2.Kyushu University)

Keywords:

4H-SiC,Carrier Recombination,TRPL

This study investigates carrier recombination in 4H-SiC epitaxial wafers using time-resolved photoluminescence (TRPL). By applying surface passivation and 266 nm pulsed laser TRPL, recombination parameters S1, τ_epi, S₂ were accurately extracted. Results show a strong correlation between surface recombination (S₁) and pit-like defects, as well as between interface recombination (S₂) and PL-Black defects. These findings establish TRPL as an effective non-destructive tool for evaluating structural defects and improving 4H-SiC device reliability.