The 73rd JSAP Spring Meeting 2026
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Session Details

Oral presentation15 Crystal Engineering : 15.6 Group IV Compound Semiconductors (SiC)

[15p-W8E_307-1~16]15.6 Group IV Compound Semiconductors (SiC)

Sun. Mar 15, 2026 1:30 PM - 5:45 PM JST
Sun. Mar 15, 2026 4:30 AM - 8:45 AM UTC
W8E_307 (West Bldg. 8)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[15p-W8E_307-1]Development of High-Speed Growth Technology for SiC Bulk Single Crystals Using the Sublimation Method

〇Tomohisa Kato1, Taro Nishiguchi2, Yukio Nagahata3, Shigeyuki Kuboya1, Kazuma Eto1, Takafumi Ueno4, Akira Takeuchi5, Takeshi Mitani1, Kenji Momose3 (1.AIST, 2.Sumitomo Electric, 3.Resonac, 4.Mitsui Kinzoku, 5.Takeuchi Denki)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[15p-W8E_307-2]Growth of SiC bulk single crystals by sublimation method with anisotropic graphite

〇Shigeyuki Kuboya1, Yukio Nagahata2, Shunsuke Noguchi2, Kazuma Eto1, Takeshi Mitani1, Yohei Fujikawa2, Kenji Momose2, Tomohisa Kato1 (1.AIST, 2.Resonac)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-W8E_307-3]Analysis of High-Resistivity 4H-SiC Bulk Crystal Grown by High Temperature Chemical Vapor Deposition

〇Fumihiro Fujie1, Satoshi Matsuzawa1, Satoshi Asada1, Dai Kutsuzawa1, Tomohiro Shonai2, Hidekazu Tsuchida1 (1.CRIEPI, 2.Resonac Corporation)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-W8E_307-4]Formation of p-Type SiC Layer by Close-Spaced Sublimation Using Solution-Grown SiC as a Sublimation Source

〇(B)Heiji Kitano1, Syuto Sugimoto1, Tsutomu Sonoda2, Kentaro Kutsukake1,2, Shunta Harada1,2, Yoshiyuki Yonezawa2, Masashi Kato3, Toru Ujihara1,2 (1.Grad. Sch. Eng. Nagoya Univ., 2.IMaSS Nagoya Univ., 3.Nagoya Inst. of Tech.)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-W8E_307-5]Step-Bunching Relaxation Mechanism during Dissolution in Solution Growth of 4H-SiC

〇Shuto Sugimoto1, Kutsukake Kentaro1,2, Harada Shunta1,2, Ujihara Toru1,2 (1.Nagoya Univ., 2.IMaSS Nagoya Univ.)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-W8E_307-6]Analysis of Macrostep Propagation Angle in SiC Solution Growth Using Phase-field Method

〇Seiya Harada1, Takahiro Ito1, Kentaro Kutsukake1,2, Shunta Harada1,2, Hitoshi Miura3, Ujihara Toru1,2 (1.Grad.Sch.Eng., Nagoya Univ., 2.IMaSS Nagoya Univ., 3.Grad.Sch.Sci., Nagoya City Univ.)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-W8E_307-7]Formation Mechanism of Polycrystals on Crystal Surface in SiC Solution Growth

〇(M2)Hiroki Sugiura1, Kentaro Kutsukake1,2, Shunta Harada1,2, Toru Ujihara1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-W8E_307-8]Low-temperature deposition of SiC using vinylsilane with an ion beam

〇Koki Ono1, Takayoshi Tsutsumi1,2, Kenji Ishikawa1,2, Wakana Takeuchi3, Kenichi Uehara4, Shigeo Yasuhara4, Masaru Hori2, Hiromasa Tanaka1,2 (1.Nagoya Univ. Eng., 2.cLPS, 3.Aichi Inst. Tech., 4.Japann Advanced Chemicals)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[15p-W8E_307-9]Correlation of Carrier Recombination with Structural Defects in 4H-SiC Epitaxial Wafers

〇(M2)LINGLUN YEN1, PoLin Sung1, Anton Visikovskiy2, Satoru Tanaka2, LuSheng Hong1 (1.National Taiwan University of Science and Technology, 2.Kyushu University)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)English Presentation

[15p-W8E_307-10]Whole-Wafer Imaging of 6-inch 4H-SiC Wafers using Synchrotron X-ray Topography
at SPring-8 BL16B2

〇(M2)RUI ZHOU1, Weiyuan Xia1, Yuhui Huang1, Kentaro Kajiwara2, Takashi Kameshima2,3, Taito Osaka3, Makina Yabashi3, Takayoshi Shimura1,3 (1.Waseda Univ., 2.JASRI, 3.RIKEN)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[15p-W8E_307-11]Influence of defects in 4H-SiC epitaxial wafers on decay curves acquired by μ-PCD

〇Takumi Wakabayashi1,3, Kazushi Hayashi2, Hideo Fujii2, Naoki Okano3, Junji Senzaki1 (1.AIST, 2.Kobe Steel, LTD., 3.Kobelco Research Inst.)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[15p-W8E_307-12]Formation and Structural Characterization of Si Oxynitride Atomic Layers on m-Plane SiC

〇Jumpei Mori1, Sultan Kutlu1, Terao Yutaka2, Lin-Lun Yen3, Lu-Shen Hong3, Anton Visikovskiy1, Satoru Tanaka1,3 (1.Kyushu Univ., 2.Fuji Electric, 3.Taiwan Tech.)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[15p-W8E_307-13]Microscopic Structure of 3C-SiC/4H-SiC Stacked Epitaxial Cross-Section Formed by Simultaneous Lateral Epitaxy(SLE)

〇Hiroyuki Nagasawa1,2, Masao Sakuraba2, Michimasa Musya2, Maho Abe2, Takenori Tanno2, Shigeo Sato2 (1.CUSIC Inc., 2.RIEC Tohoku Univ.)
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[15p-W8E_307-14]Relationship Between (0001) Lattice Plane Spacing and Resistivity in Hopping Conduction Region in p-Type 4H-SiC Epilayers with Al Concentration of 2.5×1019 cm-3

〇Atsuki Hidaka1, Tomoya Narita1, Shouki Kurose1, Yuuma Kikuchi1, Hiromu Umeuchi1, Mitsuhide Iwatsuki1, Rina Hamada1, Hideharu Matsuura1, Shiyang Ji2, Kazuma Eto2, Kazutoshi Kojima2, Tomohisa Kato2, Sadafumi Yoshida2 (1.OECU, 2.AIST)
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[15p-W8E_307-15]Temperature dependence of mobility for nearest-neighbor hopping in heavily Al-doped 4H-SiC

〇Tomoya Narita1, Atsuki Hidaka1, Hideharu Matsuura1, Shiyang Ji2, Kazuma Eto2, Kazutoshi Kojima2, Tomohisa Kato2, Sadafumi Yoshida2 (1.Osaka Electro-Communication Univ, 2.AIST)
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[15p-W8E_307-16]Developing a Quantitative Visual Inspection and Quality Prediction Machine Learning Models for SiC Laser Slicing Process

〇Akihiro Yasukawa1, Keiichi Osada1, Masaki Takaishi1, Tsuyoshi Naya2, Hiuma Iwase2, Takashi Kawabata2 (1.Aixtal, 2.Nkamura-Tome)
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