[15p-WL2_101-1~13] 6.3 Oxide electronics

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[15p-WL2_101-5] Photo-irradiation and Cs-adsorbed driven formation of two-dimensional metallic stateat β-Ga₂O₃ (001) surface

〇(M1)Suryo Santoso Putro¹, Ye-Jin L. Lee^2,3, Vladimir V. Kochurikhin^4,5, Taketoshi Tomida^4,5,6, Masanori Kitahara^4,5,6, Takahiko Hiroiai^5,7, Akira Yoshikawa^4,5,6,7, Hiroshi Mizuseki⁸, Noriko Chikumoto⁹, Nobuhiko Sarukura^7,9, Kenichi Ozawa¹⁰, Daisuke Shiga¹, Hiroshi Kumigashira¹, Ryu Yukawa² (1.IMRAM, Tohoku Univ., 2.SRIS, Tohoku Univ., 3.Faculty des Sciences et Ingenierie, Sorbonne Univ., 4.IMR, Tohoku Univ., 5.C&A Corp., 6.FOX Corp., 7.NICHe, Tohoku Univ., 8.Korea Institute of Science and Technology (KIST), 9.Institute of Laser Engineering, the Univ. of Osaka, 10.IMSS, KEK)

Keywords:

2D Metallic state,ARPES,Sheet carrier density

In this study, we investigate how photo-irradiation modulates the 2D metallic state at Cs-adsorbed β-Ga₂O₃ (001) surface using angle-resolved photoemission spectroscopy (ARPES) at BL-2A MUSASHI of the Photon Factory, KEK. Cs was deposited in situ and ARPES spectra near the Fermi level (EF) were tracked as a function of irradiation time. Our purpose is to elucidate the microscopic mechanism enabling precise control of the resulting 2D metallic state.