The 73rd JSAP Spring Meeting 2026
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Session Details

Oral presentation6 Thin Films and Surfaces : 6.3 Oxide electronics

[15p-WL2_101-1~13]6.3 Oxide electronics

Sun. Mar 15, 2026 1:30 PM - 5:00 PM JST
Sun. Mar 15, 2026 4:30 AM - 8:00 AM UTC
WL2_101 (West Lecture Bldg. 2)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[15p-WL2_101-1][The 59th Young Scientist Presentation Award Speech] VO2 phase diagram under the effect of hydrogen gas pressure and the influence of interface kinetics

〇Satoshi Hamasuna1, Takeaki Yajima1 (1.Kyushu Univ.)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-WL2_101-2]Proton Diffusion in EuNiO3 Thin Films studied by First-Principles calculation and Electrochemical Impedance Spectroscopy

〇(M1)Kenta Nakanishi1, Ikutaro Hamada2, Haobo Li1,3, Hidekazu Tanaka1,3 (1.SANKEN, Univ. of Osaka, 2.Grad. School of Eng., Univ. of Osaka, 3.OTRI, Univ. of Osaka)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-WL2_101-3]Structual properties of Ti2O3 films grown on van der Waals hBN multilayers

〇Keitaro Kanno1, Takuto Soma1, Satoru Fukamachi2, Hiroki Ago2, Hironori Nakao3, Akira Ohtomo1, Kohei Yoshimatsu1 (1.Science Tokyo, 2.Kyushu Univ., 3.KEK-IMSS)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-WL2_101-4]Low-Temperature RF Switching Device Using the Metal-Insulator Phase Transition of VO2 thin films

〇Harutaka Koyama1,2, Hiroshi Oike2, Keisuke Shibuya3, Takanobu Watanabe1, Yusuke Kozuka1,2,4 (1.Waseda Univ, 2.NIMS, 3.AIST, 4.AIMR Tohoku Univ)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[15p-WL2_101-5]Photo-irradiation and Cs-adsorbed driven formation of two-dimensional metallic stateat β-Ga2O3 (001) surface

〇(M1)Suryo Santoso Putro1, Ye-Jin L. Lee2,3, Vladimir V. Kochurikhin4,5, Taketoshi Tomida4,5,6, Masanori Kitahara4,5,6, Takahiko Hiroiai5,7, Akira Yoshikawa4,5,6,7, Hiroshi Mizuseki8, Noriko Chikumoto9, Nobuhiko Sarukura7,9, Kenichi Ozawa10, Daisuke Shiga1, Hiroshi Kumigashira1, Ryu Yukawa2 (1.IMRAM, Tohoku Univ., 2.SRIS, Tohoku Univ., 3.Faculty des Sciences et Ingenierie, Sorbonne Univ., 4.IMR, Tohoku Univ., 5.C&A Corp., 6.FOX Corp., 7.NICHe, Tohoku Univ., 8.Korea Institute of Science and Technology (KIST), 9.Institute of Laser Engineering, the Univ. of Osaka, 10.IMSS, KEK)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)English Presentation

[15p-WL2_101-6]Electronic and electrical states of HfO2/β-Ga2O3 interfaces

〇(D)Abul Tooshil1,2, Takahiro Nagata1, Masaharu Watanabe1,3, Yoshiyuki Yamashita1,2 (1.NIMS, 2.Kyushu University, 3.Meiji University)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-WL2_101-7]Evaluation of Forward Current–Voltage Characteristics in (La1-xSrx)VO3/n-Si Junctions

〇(M1)Koji Iwasaki1, Ryosuke Takagi1, Shuhei Hashimoto1, Kaito Hujitani1, Yasushi Hotta1 (1.Hyogo Univ.)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-WL2_101-8]Rule of barrier layer to prevent inherent charge transfer in oxide heterostructures

〇(M2)Ryotaro Hayasaka1, Yuuki Masutake1, Seitaro Inoue1, Daisuke Shiga1,2, Kenich Ozawa2, Hiroshi Kumigashira1,2 (1.IMRAM, Tohoku Univ., 2.IMSS, KEK)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-WL2_101-9]Structural phase transformation in zirconium dioxide freestanding membranes

〇(B)Sayaka Shindo1, Miyazaki Kota1, Maki Rintaro2, Nakahata Miki3, Ikeda Osamu4, Koganezawa Tomoyuki4, Okamoto Kazuki3, Funakubo Hiroshi3, Shimakawa Yuichi2, Kan Daisuke1 (1.Univ. of Osaka, 2.Kyoto Univ., 3.Science Tokyo., 4.JASRI)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[15p-WL2_101-10]Controlled Growth of Atomically Flat Thin Films of Electronic Ferroelectric LuFe2O4 Having Anomalous Single-Atomic-Layer Surface Steps

〇Atsushi Fukuchi1, Hiroki Arisawa1,2,3, Eiji Saitoh1,2,3,4,5, Hiroyuki Kobayashi6, Satoshi Okamoto1,6 (1.UT-Sumitomo Chemical Cooperation Program, 2.Dept. Appl. Phys, Univ. Tokyo, 3.RIKEN CEMS, 4.BAI Univ. Tokyo, 5.AIMR Tohoku Univ., 6.Sumitomo Chemical Collaborative Research Cluster)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[15p-WL2_101-11]Observation of the Formation Process of Metallic Phase Domains in VO2 Thin Films on the TiO2(110) by AFM Current Imaging

〇Tatsuhiro Negi1, Ai I. Osaka1, Seiji Nakashima1, Hironori Fujisawa1 (1.Univ. of Hyogo)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[15p-WL2_101-12]Operando laser-based photoemission electron microscopy for VO2 selector devices

〇Hirokazu Fujiwara1,2, Cedric Bareille3, Mario Okawa3, Toshiyuki Taniuchi1,2 (1.GSFS, Univ. of Tokyo, 2.MIRC, Univ. of Tokyo, 3.ISSP, Univ. of Tokyo)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[15p-WL2_101-13]Temperature Dependence of Resistance in Mott Transition Switching of Carbon-Doped NiOx Thin Films Prepared by Mist CVD

〇Masamichi Azuma1,2, Tsubasa Miyamoto1, Yutaka Murakami1, Hiroyuki Nishinaka1 (1.Kyoto Inst. of Tech., 2.Symetrix Corp.)
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