[16a-M_101-1~12] 17.1 Carbon nanotubes & other nanocarbon materials

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[16a-M_101-4] Carbon Nanotube Field-Effect Transistors Using a Sublimable Dispersant

〇Yuichi Kato¹, Takumi Inaba², Yoko Iizumu¹, Kazufumi Kobashi¹, Takahiro Morimoto¹, Toshiya Okazaki¹ (1.AIST NCMRI, 2.AIST SFRC)

Keywords:

carbon nanotubes,field-effect transistor,sublimation

Single-walled carbon nanotubes exhibit both metallic and semiconducting properties and dispersing them in a liquid using dispersants is essential for separating carbon nanotubes with different electrical characteristics. However, for field-effect transistor (FET) applications, impurities such as defects acting as traps on the channel surface and residual dispersants pose significant challenges. The 10-octyl-alkyl side chain of flavin serves as a dispersant that disperses and separates semiconducting SWNTs and can be subsequently removed by sublimation under 200 °C. Here, we report on carbon nanotube FETs using this sublimable dispersant and a removal process compatible with back-end of line semiconductor processing.