Presentation Information

[16a-M_101-7]Reduction of Interface State Density in Carbon Nanotube Thin-Film Transistors by Removing Surface Adsorbates

〇Yuto Sekine1, Daisuke Matsubara1, Eito Kuromiya1, Haruki Uchiyama1, Masahiro Matsunaga2, Hiromichi Kataura3, Yutaka Ohno1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.AIST)

Keywords:

carbon nanotube,Interface state density,transistor

Carbon nanotubes (CNTs) have high mobility and mechanical flexibility, making them promising for flexible electronics applications. In CNT thin-film transistors (TFTs), degradation of electrical properties due to surface adsorbates such as surfactants and resist residues has been reported, so removal of these surface adsorbates is important. In this study, we attempted to remove adsorbates by vacuum heating treatment and evaluated its effect on the electrical and interfacial properties of CNT TFTs.