[16a-M_107-1~10] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[16a-M_107-10] Circularly polarized luminescence properties of dilute nitride GaInNAs/GaAs multiple quantum wells dependent on GaAs barrier thickness

〇Eita Tagawa¹, Ayano Morita¹, Keisuke Minehisa², Hiroto Kise¹, Junichi Takayama¹, Fumitaro Ishikawa², Akihiro Murayama¹, Satoshi Hiura¹ (1.IST, Hokkaido Univ., 2.RCIQE, Hokkaido Univ.)

Keywords:

dilute nitride semiconductor,photoluminescence,circular polarization