[16a-M_107-1~10] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[16a-M_107-2] Control of transient-signal profiles due to choice of excitation energy in a stacked GaAs/AlAs multiple quantum well

〇Osamu Kojima¹, Uruu Wakui¹, Matthew Steer², Richard Hogg^2,3 (1.Chiba Inst. Tech, 2.Univ. of Glasgow, 3.Aston Univ.)

Keywords:

exciton,GaAs/AlAs multiple quantum well,transient signal

The transient signal of excitons strongly depends on the excitation conditions. Therefore, by utilizing changes in the signal profiles, logic gate operations can be realized. In this presentation, we demonstrate the realization of an XOR operation using a double-pump method applied to stacked GaAs/AlAs multiple quantum wells.