[16a-M_107-1~10] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[16a-M_107-6] In-plane strain evaluation of multilayer SiGe nanodots by X-ray diffraction using anomalous dispersion effects

〇(D)Rieko Suenaga^1,2, Yuta Ito^1,6, Takeshi Watanabe³, Ichiro Hirosawa^4,7, Yuji Yamamoto⁵, Wei-Chen Wen⁵, Kazuhiko Omote², Atsushi Ogura^1,7 (1.Sch. of Sci. and Technol., Meiji Univ., 2.Rigaku Corp., 3.JASRI, 4.SAGA-LS, 5.IHP, 6.JSPS DC, 7.MREL, Meiji Univ.)

Keywords:

nanodot,XRD,anomalous dispersion

We report the results of X-ray diffraction (XRD) evaluation on multilayered SiGe nanodots embedded in Si spacers. To understand the strain state at the Si/SiGe interface and within the SiGe nanodots, we used anomalous dispersion effects at the Ge K-edge and tried to clarify the origin of satellite peaks observed in in-plane XRD profiles. By repeating Si 551 XRD measurements while varying the X-ray energy, we found that the satellite peaks on the lower-angle side of the Si diffraction peak decrease in intensity near the Ge K-edge, suggesting that these lower-angle satellite peaks originate from lattice strain within the SiGe nanodots. In this presentation, we will discuss in detail the strain state of the multilayer SiGe nanodots based on this result.