[16a-M_107-1~10] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-M_107-9] Ultrafast spin-polarization amplification dynamics in tunnel-coupled structures of GaNAs quantum well and InGaAs quantum dots; effects of nitrogen composition

〇Yuma Suzuki¹, Hiroto Kise², Ayano Morita², Junichi Takayama², Akihiro Murayama², Satoshi Hiura² (1.Hokkaido Univ., 2.IST, Hokkaido Univ.)

Keywords:

quantum dot,dilute nitride semiconductor,photoluminescence

Tunnel-coupled structures consisting of InGaAs quantum dots and a dilute nitride GaNAs quantum well can significantly amplify the spin polarization during light emission via a combination of the long spin lifetime of the quantum dots and the spin-filtering effect of GaNAs. In this study, we prepared the tunnel-coupled samples with different nitrogen composition and investigated the effect of nitrogen composition on the spin-polarization amplification dynamics at room temperature. Time-resolved circularly polarized photoluminescence results revealed that the speed of spin-polarization amplification was accelerated with increasing nitrogen composition.