[16a-M_278-1~7] 6.1 Ferroelectric thin films

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-M_278-1] Ferroelectric Properties of Ce-Mn co-substituted ZnO Epitaxial Thin Films on Si Substrates

〇(M1)HIROYA OISO¹, Sota Inoue¹, Yu Ukezeki¹, Norifumi Fujimura¹, Shunpei Kawano², Nobuyuki Ohtsuka², Kazuki Okamoto², Hiroshi Funakubo², Takeshi Yoshimura¹ (1.Osaka Metro. Univ., 2.Science Tokyo)

Keywords:

Ferroelectricity,Wurtzite structure

Since the report of ferroelectricity in Al1-xScxN by Fichtner et al. in 2019, research on wurtzite structured materials has rapidly progressed. Recently, ferroelectricity has also been reported in ZnO through Mg substitution and Ce-Mn co-doping. In this study, Ce-Mn co-doped ZnO epitaxial thin films were grown on Si substrates. The Ce and Mn compositions were continuously varied across the substrate by combinatorial sputtering, and the ferroelectric properties were evaluated using P-E measurements. As a result, clear hysteresis loops were observed only in a specific Ce concentration range, indicating that Ce substitution plays a dominant role in the emergence of ferroelectricity.