[16a-M_278-1~7] 6.1 Ferroelectric thin films

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-M_278-3] XAFS analysis of Zn(Ce,Mn)O ferroelectric thin films

〇Kazuhiro Nakamura¹, Yudai Yosino¹, Atsuhiro Tamai¹, Hideaki Adachi¹, Sang Hyo Kweon¹, Isaku Kanno¹, Satoshi Ogawa² (1.Kobe Univ., 2.Nagoya Univ.)

Keywords:

Ferroelectric thin films,ZnO thin films,XAFS

In recent years, it has been reported that ferroelectricity is exhibited in thin films of wurtzite structure materials, such as AlN and ZnO, by introducing dopants. Because of their high remanent polarization, these materials are expected to be useful for applications such as ferroelectric memory. Our research group has reported clear ferroelectricity in Zn(Ce,Mn)O thin films, in which Ce and Mn are co-substituted for Zn [1]. However, the effects of these dopants remain unclear. In this study, we performed XAFS analysis of Zn(Ce,Mn)O thin films to clarify the effects of the dopants and their local structure.