[16a-M_278-1~7] 6.1 Ferroelectric thin films

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-M_278-4] Ferroelectricity of Mg and Mn co-substituted ZnO thin films

〇Yudai Yoshino¹, Kazuki Nomura¹, Kazuhiro Nakamura¹, Atsuhiro Tamai¹, Sang Hyo Kweon¹, Hideaki Adachi¹, Isaku Kanno¹ (1.Kobe Univ.)

Keywords:

ferroelectric thin film,ZnO thin film

In 2021, Ferri et al. reported ferroelectricity in Mg-doped ZnO (ZnMgO) thin films. Their findings suggest that improving insulation by increasing the bandgap of ZnO is crucial for the emergence of ferroelectricity in ZnO-based systems. However, doping with Mg alone typically does not sufficiently improve the insulation of ZnO thin films, making it difficult to achieve stable ferroelectricity. In this study, with the aim of improving insulation properties, we deposited ZnO thin films co-substituted with Mg and Mn and investigated the effects on their ferroelectric properties.