[16a-M_278-1~7] 6.1 Ferroelectric thin films

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-M_278-6] Development of Memory Devices with Combined Analog and Forgetting Characteristics Based on Single-Molecule Electret

〇Masaki Arima¹, Kazushi Takeda¹, Rikuto Tamatani¹, Yuki Nakano², Masato Haneda¹, Chisato Kato¹, Jun Manabe¹, Masaru Fujibayashi³, Takayoshi Nakamura¹, Sadafumi Nishihara^1,4,5 (1.Grad. Sch. Adv. Sci. Eng. Hiroshima Univ., 2.Materialgate Inc., 3.NIT, Ube College, 4.CResCent, Hiroshima Univ., 5.PRESTO, JST)

Keywords:

Ferroelectrics,Single-molecule electret,Memory devices

Biological memory integrates analogue plasticity, in which synaptic strength changes continuously with spike count, and intrinsic forgetting, in which low-frequency information decays over time. These functions impose opposing physical requirements, namely stable and controllable state retention, and time-dependent relaxation. In this presentation, we investigate a single-molecule electret that exhibits polarization relaxation: spontaneous polarization increases during electric-field application and decays exponentially after the electric-field is removed. By exploiting this dynamic polarization response, we aim to develop a new memory device that simultaneously enables analogue tunability and natural forgetting.