[16a-PA2-1~6] 13.2 Exploratory Materials, Physical Properties, Devices

[16a-PA2-5] Characterization of Optical Properties in Mg₃Sb₂Thin Films

〇Ryosuke Kobayashi¹, Nozomu Kiridoshi¹, Akito Ayukawa¹, Koki Nejo¹, Takeru Kuriyama¹, Haruhiko Udono¹, Shunya Sakane¹ (1.Ibaraki Univ.)

Keywords:

Semiconducting silicide,Infrared photoresponse

In recent years, infrared sensors have become increasingly important as an essential technology for object detection and identification alongside the automation of various systems. Since the bandgap of Mg₃Sb_2-xBi_x materials can be tuned by the Sb/Bi ratio, their application in infrared photodetection would allow for the design of sensors with optimal sensitivity in target wavelength ranges. We have previously fabricated epitaxial Mg₃Sb₂ thin films on Si(001) substrates and confirmed their infrared photoresponse. In this study, we further investigated their optical properties.