Session Details

[16a-PA2-1~6]13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 16, 2026 9:30 AM - 11:00 AM JST
Mon. Mar 16, 2026 12:30 AM - 2:00 AM UTC
PA2 (Arena (1F))

[16a-PA2-1]Connection of Back Illuminated Mg2Si-pn Junction PD Array to si Interposer

〇Hiroki Yamaguchi1, Hideto Takei1, Yuki Iino1, Hidehiro Sekiguchi1, Yuki Okamoto2, Ryouhei Takei2, Hideki Takagi2, Shunya Sakane1, Haruhiko Udono1 (1.Ibaraki Univ., 2.AIST)

[16a-PA2-2]Microstructural Characterization of Ag-Diffusion Behavior on Mg2Si Substrate

〇Hidehiro Sekiguchi1, Hideto Takei1, Hibiki Katsumata1, Kosuke Shimano1, Shunya Sakane1, Haruhiko Udono1 (1.Ibaraki Univ.)

[16a-PA2-3]Electrical Characterization of n+p Junction Mg2Si Diodes Formed by Impurity Diffusion

〇Shogo Hasegawa1, Hibiki Katsumata1, Ryosuke Furuta1, Kosuke Shimano1, Zenji Fujihisa1, Shunya Sakane1, Haruhiko Udono1 (1.Ibaraki Univ.)

[16a-PA2-4]Effect of Melt Composition on the Electrical Properties of Mg2Si Crystals: Evaluation by Infrared Absorption

〇Minoru Okawara1, Kosuke Shimano1, Shunya Sakane1, Haruhiko Udono1 (1.Ibaraki Univ.)

[16a-PA2-5]Characterization of Optical Properties in Mg3Sb2Thin Films

〇Ryosuke Kobayashi1, Nozomu Kiridoshi1, Akito Ayukawa1, Koki Nejo1, Takeru Kuriyama1, Haruhiko Udono1, Shunya Sakane1 (1.Ibaraki Univ.)

[16a-PA2-6]Band gap evaluation of ternary and quaternary chalcopyrite-type semiconductors by high-throughput calculations

〇Daiki Mikita1, Yusuke Noda1,2 (1.Grad. Sch. CSSE, Kyushu Inst. Tech., 2.DS-AI Res. Ctr., Kyusyu Inst. Tech.)