Presentation Information
[16a-PA6-2]Ferroelectricity of Hf-substituted ZnO thin films
〇Kazuki Nomura1, Yudai Yoshino1, Kazuhiro Nakamura1, Atsuhiro Tamai1, Sang Hyo Kweon1, Hideaki Adachi1, Isaku Kanno1 (1.Kobe Univ.)
Keywords:
ferroelectric thin film,ZnO thin film
We have previously reported the emergence of ferroelectricity in Zn(Ce,Mn)O thin films, in which Ce and Mn dope into ZnO. This is achieved by reducing the c/a ratio through substitution of Zn with Ce, which has a larger ionic radius and higher valence, and further improving the insulating properties of ZnO via Mn substitution. In the present study, with the aim of exploring new dopant elements for ZnO thin films, we deposited ZnHfO thin films doped with Hf, which has an ionic radius comparable to that of Zn and the same valence state (4+) as Ce, and investigated its effect on ferroelectricity.