Presentation Information
[16a-PA6-5]Operando X-ray Absorption Spectroscopy of Local Structural Changes in ScGaN Thin Films under Applied Electric Field
〇(M1)Hikaru Kobayashi1, Ryoma Asoshina1, Hiroyuki Setoyama2, Nobuo Nakajima3, Kenji Hirata4, Morito Akiyama4, Masato Uehara1,4 (1.Kyushu Univ., 2.SAGA-LS, 3.Hiroshima Univ., 4.AIST)
Keywords:
Ferroelectric,XAFS,Operando
We observed the electric-field response of ScGaN thin films using operando XAFS. The pre-edge intensity in the Sc-K edge XANES followed the applied voltage waveform, while the main peak changed in opposite phase. The amplitude of intensity variation correlated with the voltage magnitude, directly revealing that the local structure around Sc sites reversibly changes under an external electric field. In this presentation, we also report ferroelectric responses accompanied by polarization switching.