Presentation Information
[16a-PB4-9]Analysis of the J-V curvature coefficient of triple-barrier resonant tunneling diodes for zero-bias detection in the terahertz band and electromagnetic field analysis of integrated rectenna for chip implementation
〇Kazuki Sudo1, Taiki Terano1, Jun Iwai1, Kik Alfred1, Michihiko Suhara1, Kiyoto Asakawa2, Issei Watanabe3, Kouichi Akahane3 (1.Tokyo Metropolitan Univ., 2.Tokyo Metropolitan College of Industrial Technology, 3.National Institute of Information and Communications Technology)
Keywords:
resonant tunneling diodes,rectenna,zero-bias detection
A rectenna for terahertz-band zero-bias detection was designed and prototyped as an integration of a triple-barrier resonant tunnel diode based on a compound semiconductor heterojunction and a self-complimentary antenna. Detection operation was observed in the 300 GHz band. This paper reports on the results of theoretical formulation using the measured current density-bias voltage characteristics with Voigt function for redesigning the rectenna to improve detection characteristics, and on the analysis of characteristics obtained from electromagnetic field analysis of the integrated rectenna, assuming chip-level integration.