Presentation Information
[16a-PB6-2]Growth and First-Principles Calculation of Ge-rich InGeSb Alloy Crystals for Band Engineering
〇Gaku Ishizu1, Tomo Horota1, Fuga Suzuki1, Yasuhiko Ishikawa1, Keisuke Yamane1 (1.Toyohashi Tech.)
Keywords:
silicon photonics,Band engineering,Germanium
We investigated InGeSb alloys for the realization of light sources on Si substrates, as these alloys are expected to achieve compatibility between high-concentration doping and the preservation of crystallinity. Based on first-principles calculations, we attempted MBE growth. The results suggested phase separation at low temperatures, whereas high-quality single-crystal films were obtained at 500°C. In this presentation, we will report the evaluation results of the crystal structure and photoluminescence (PL) properties of the fabricated samples, and discuss the band structure modulation induced by InSb incorporation along with guidelines for improving light emission performance.