[16a-S2_201-1~13] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[16a-S2_201-5] Mechanism of the transverse Seebeck coefficient enhancement based on interfacial conductive transport analysis in semiconductor/ferromagnetic metal multilayer

〇Reona Kitaura¹, Tsukasa Terada¹, Takafumi Ishibe^1,2, Masaki Mizuguchi³, Hidetoshi Miyazaki⁴, Yoshiaki Nakamura^1,2 (1.Eng. Sci. The Univ. Osaka, 2.OTRI The Univ. Osaka, 3.IMaSS, Nagoya Univ., 4.Nagoya Institute of Technology)

Keywords:

Thermoelectric material

The anomalous Nernst effect generates a voltage in a direction perpendicular to the applied temperature gradient, enabling a simplified thin-film thermoelectric device structure. Owing to its potential for high durability and low-cost fabrication, magnetic thermoelectric materials have attracted increasing attention in recent years. As an approach to enhancing their performance, systematic methods to increase the transverse Seebeck coefficient through interfaces and structural engineering have been proposed; however, the detailed physical origin of such enhancement remains unclear. In this study, we investigate the origin of the interface-induced enhancement of the transverse Seebeck coefficient using Si/Co multilayer structures.