[16a-S2_203-1~9] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:15 AM - 9:45 AM JST(12:15 AM - 12:45 AM UTC)English Presentation

[16a-S2_203-2] [The 17th Silicon Technology Division Paper Award Speech] Hole Mobility Enhancement in pMOSFETs Through High Ge Content, Asymmetric Strain and (110)-Oriented Channels

〇Chia-Tsong Chen¹, Xueyang Han¹, Kei Sumita¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo)

Keywords:

Ge-on-Insulator,Compressive strain,(110)-oriented substrate

As the transistor architecture transmits from FinFET to nanosheet and complementary FET, innovations for enhancing hole mobility in ultrathin body channel are urgently needed to address performance imbalance between nFETs and pFETs [1]. In this study, we introduce (Si)Ge channels with asymmetric strain (quasi-uniaxial strain) to improve mobility in ultrathin channels. Furthermore, the effectiveness of introducing (110)-oriented substrates for mobility enhancement is demonstrated by high asymmetric strain (110) SiGe channels along <110> direction.