[16a-S2_203-1~9] 13.5 Semiconductor devices/ Interconnect/ Integration technologies | The 73rd JSAP Spring Meeting 2026

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Oral presentation13 Semiconductors : 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[16a-S2_203-1~9]13.5 Semiconductor devices/ Interconnect/ Integration technologies

Mon. Mar 16, 2026 9:00 AM - 11:45 AM JST
Mon. Mar 16, 2026 12:00 AM - 2:45 AM UTC

S2_203 (South Bldg. 2)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[16a-S2_203-1]The 17th Silicon Technology Division Paper Award / Young Researcher Award Ceremony

〇Osamu Nakatsuka^1,2 (1.Chief Secretary of Silicon Technology Division, 2.Nagoya Univ.)

9:15 AM - 9:45 AM JST(12:15 AM - 12:45 AM UTC)English Presentation

[16a-S2_203-2][The 17th Silicon Technology Division Paper Award Speech] Hole Mobility Enhancement in pMOSFETs Through High Ge Content, Asymmetric Strain and (110)-Oriented Channels

〇Chia-Tsong Chen¹, Xueyang Han¹, Kei Sumita¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[16a-S2_203-3][The 17th Silicon Technology Division Young Researcher Award] Intra-Grain Defect Formation via Discontinuous Solid-Phase Epitaxy

〇Manabu Tezura¹, Takanori Asano¹, Riichiro Takaishi¹, Mitsuhiro Tomita¹, Masumi Saitoh¹, Hiroki Tanaka¹ (1.Frontier Technology R&D Inst.)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[16a-S2_203-4][The 17th Silicon Technology Division Young Researcher Award] Temporary Direct Bonding by Low-Temperature Deposited SiO₂ film

〇Koki Onishi¹, Hayato Kitagawa¹, Shunsuke Teranishi², Akira Uedono³, Fumihiro Inoue¹ (1.Yokohama National Univ., 2.DISCO corp., 3.Tsukuba Univ.)

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-S2_203-5]Analysis of the Correlation Between Dynamics and Edge-Void Formation in Wafer Bonding

〇Hyuga Ishii¹, Ryota Ogata¹, Taisuke Yamamoto¹, Ryosuke Sato¹, Hayato Kitagawa¹, Fumihiro Inoue¹ (1.Yokohama Nat Univ.)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-S2_203-6]Process Optimization for High-Thermal Conductivity, Low-Temperature-Grown AlN for 3DIC/TSV by FM-CVD

〇(P)Yuhei Otaka¹, Lu Yin-Chi¹, Hatakeyama Daiki¹, Jun Yamaguchi¹, Tamaoki Naoki¹, Noboru Sato¹, Atsuhiro Tsukune¹, Yukihiro Shimogaki¹ (1.Univ. Tokyo)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[16a-S2_203-7]Identification of Defective Location in TSV Structures for 3D Integrated Circuits Using the IR OBIRCH Method

〇(M1)Yujiro Takehara¹, Mizutani Naoki², Kouno Takurou³, Terasawa Yasuo³, Imura Fumito⁴, Akai Ichirou⁵, Aonishi Toru⁶, Hashishin Takeshi⁷ (1.GSST, Kumamoto Univ., 2.WDB Co., Ltd., 3.Nidek Co., Ltd., 4.Hundred Semiconductors Inc., 5.IINA, Kumamoto Univ., 6.GSFS, University of Tokyo., 7.FAST, Kumamoto Univ.)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[16a-S2_203-8]Development of Planarized Resist Coating Technology for Deep Patterned Substrates

〇Haruki Kojima¹, Hirotsugu Kawashima¹, Sota Matsumoto¹, Yusuke Okumura¹, Akira Matsumura¹, Koji Arita¹ (1.KIOXIA Corporation)

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)English Presentation

[16a-S2_203-9]Suppression of Native Oxide in BaSi₂ Solar Cells through HTL Engineering

〇Md Ariful Islam¹, Yuka Fukaya¹, Koki Hayashi¹, Mizuki Hirai¹, Yoichiro Koda², Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ., 2.Tosoh Corp.)

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