[16a-W8E_308-1~4] 15.2 II-VI and related compounds

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[16a-W8E_308-3] Growth Orientation Analysis of SnTe Epitaxial Layers on GaAs Substrates by XRD Pole Figure Measurements

〇Yingjie Chen¹, Dongkai Shen¹, Hiromu Murakami¹, Rei Miyazawa¹, Masakazu Kobayashi^1,2 (1.Waseda Univ. Dept.of.EE.&BS, 2.Waseda Univ. Lab.for Mat.Sci.&Tech.)

Keywords:

SnTe,X-ray diffraction (XRD) pole figure,topological crystalline insulator

SnTe is a mirror-symmetry-derived topological crystalline insulator (TCI), and high-quality single-domain epitaxial films are essential. While our previous nucleation process combining an amorphous layer with annealing improved surface flatness, multiple orientations—(001), (011), and (111)—were found to coexist. Therefore, we analyzed the orientation components and their correlation with growth conditions using XRD pole-figure measurements. We found that high-temperature, long-time annealing increases the (111) component, whereas shorter annealing increases the (011) component, indicating that temperature strongly influences the film orientation.