Presentation Information
[16a-W8E_308-4]Investigation of growth conditions for α- and γ-MnTe grown on InP substrates using XRD pole figure measurement
〇Rei Miyazawa1, Masakazu Kobayashi1,2, Candice R Forrester3, Sina Mohammadi3, Aran Barton3, Jisoo Moon3, Maria C Tamargo3 (1.Waseda Univ. Dept.of.EE.&BS, 2.Waseda Univ. Lab.for Mat.Sci.&Tech., 3.City University of New York)
Keywords:
semiconductor
MnTe has attracted renewed attention due to its promising magnetic properties. In particular, α-MnTe has recently been reported to exhibit a novel class of magnetism known as altermagnetism, which is expected to open new possibilities for spintronic device applications. However, the growth of single-phase α-MnTe remains challenging. In this study, MnTe thin films were grown on InP(111) substrates by molecular beam epitaxy (MBE) under various growth conditions, including the Mn:Te flux ratio, growth temperature, and the use of buffer layers. The crystalline structure of the films was characterized by high-resolution X-ray diffraction using 2θ–ω scans and pole figure analysis, and the influence of the growth conditions on the emergence of the α phase was investigated